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  Microsemi Electronic Components Datasheet  

2N6849 Datasheet

P-Channel MOSFET

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2N6849
Available on
commercial
versions
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/564
DESCRIPTION
This 2N6849 switching transistor is military qualified up to the JANS level for high-reliability
applications. This device is also available in a low profile U surface mount package.
Microsemi also offers numerous other transistor products to meet higher and lower power
ratings with various switching speed requirements in both through-hole and surface-mount
packages.
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N6849 number.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/564.
(See part nomenclature for all available options.)
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
Lightweight top-hat design with flexible terminals offers a variety of mounting flexibility.
Military and other high-reliability applications.
TO-205AF (TO-39)
Package
Also available in:
U-18 LCC package
(surface mount)
2N6849U
MAXIMUM RATINGS @ TA = +25ºC unless otherwise stated
Parameters / Test Conditions
Symbol
Value
Unit
Operating & Storage Junction Temperature Range
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ TA = +25 °C
@ TC = +25 °C (1)
Drain-Source Voltage, dc
Gate-Source Voltage, dc
Drain Current, dc @ TC = +25 ºC (2)
Drain Current, dc @ TC = +100 ºC (2)
Off-State Current (Peak Total Value) (3)
Source Current
TJ & Tstg
R ӨJC
PT
V DS
V GS
ID1
ID2
IDM
IS
-55 to +150
5.0
0.8
25
-100
± 20
-6.5
-4.1
-25
-6.5
°C
oC/W
W
V
V
A
A
A (pk)
A
Notes:
1. Derate linearly 0.2 W/°C for T C > +25 °C.
2. The following formula derives the maximum theoretical ID limit. ID is also limited by package and
internal wires and may be limited due to pin diameter.
3. IDM = 4 x ID1 as calculated in note 2.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0009, Rev. 3 (121484)
©2012 Microsemi Corporation
Page 1 of 7


  Microsemi Electronic Components Datasheet  

2N6849 Datasheet

P-Channel MOSFET

No Preview Available !

2N6849
MECHANICAL and PACKAGING
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only).
MARKING: Part number, date code, manufacturer’s ID.
WEIGHT: Approximately 1.064 grams.
See Package Dimensions on last page.
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
PART NOMENCLATURE
JAN 2N6849 (e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Symbol
di/dt
IF
RG
V DD
V DS
V GS
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Forward current
Gate drive impedance
Drain supply voltage
Drain source voltage, dc
Gate source voltage, dc
T4-LDS-0009, Rev. 3 (121484)
©2012 Microsemi Corporation
Page 2 of 7


Part Number 2N6849
Description P-Channel MOSFET
Maker Microsemi
PDF Download

2N6849 Datasheet PDF






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