• Part: APT50GN60BDQ2
  • Description: Resonant Mode Combi IGBT
  • Manufacturer: Microsemi
  • Size: 183.75 KB
Download APT50GN60BDQ2 Datasheet PDF
Microsemi
APT50GN60BDQ2
TYPICAL PERFORMANCE CURVES APT50GN60BDQ2 APT50GN60BD_SDQ2(G) APT50GN60SDQ2 APT50GN60BDQ2(G) APT50GN60SDQ2(G) .. 600V - G Denotes Ro HS pliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 47 D3PAK (S) - 600V Field Stop - - - - Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current All Ratings: TC = 25°C unless otherwise specified. APT50G...