APT80GA90S Key Features
- Fast switching with low EMI
- Very Low Eoff for maximum efficiency
- Ultra low Cres for improved noise immunity
- Low conduction loss
- Low gate charge
- Increased intrinsic gate resistance for low EMI
- RoHS pliant
- Part: APT80GA90S
- Manufacturer: Microsemi (official site)
- Size: 221.86 KB
Related Microsemi Datasheets
| Part Number | Description |
|---|---|
| APT80GA90B | High Speed PT IGBT |
| APT84F50B2 | N-Channel MOSFET |
| APT84F50L | N-Channel MOSFET |
| APT84M50B2 | N-Channel MOSFET |
| APT84M50L | N-Channel MOSFET |
APT80GA90S Description
APT80GA90B APT80GA90S 900V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency pared to other IGBT technologies.