APT80GA90B - High Speed PT IGBT

Microsemi (now Microchip Technology)

Key Features

Fast switching with low EMI.
Very Low Eoff for maximum efﬁciency.
Ultra low Cres for improved noise immunity.
Low conduction loss.
Low gate charge.
Increased intrinsic gate resistance for low EMI.
RoHS compliant.

APT80GA90B high speed pt igbt by Microsemi (now Microchip Technology) - Datasheet Preview

Datasheet Details

Part number	APT80GA90B
Manufacturer	Microsemi (now Microchip Technology)
File Size	221.86 KB
Description	High Speed PT IGBT
Datasheet	APT80GA90B Datasheet

Full PDF Text Transcription for APT80GA90B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APT80GA90B. For precise diagrams, and layout, please refer to the original PDF.

APT80GA90B APT80GA90S 900V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design ...

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IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efﬁciency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.

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