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APT80GA90S - High Speed PT IGBT

Download the APT80GA90S datasheet PDF. This datasheet also covers the APT80GA90B variant, as both devices belong to the same high speed pt igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Fast switching with low EMI.
  • Very Low Eoff for maximum efficiency.
  • Ultra low Cres for improved noise immunity.
  • Low conduction loss.
  • Low gate charge.
  • Increased intrinsic gate resistance for low EMI.
  • RoHS compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (APT80GA90B-Microsemi.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for APT80GA90S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APT80GA90S. For precise diagrams, and layout, please refer to the original PDF.

APT80GA90B APT80GA90S 900V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design ...

View more extracted text
IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.

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