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APTM100A23SCTG - MOSFET Power Module

Features

  • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated Q2 G2 S2 0 /V BU S NT C1.
  • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF.
  • Kelvin source for easy drive.
  • Very low stray inductance - Symmetrical design - Lead frames for power connections.
  • Internal thermistor for temperature m.

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Full PDF Text Transcription

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APTM100A23SCTG Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 230mΩ typ @ Tj = 25°C ID = 36A @ Tc = 25°C VBUS NT C2 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 G1 S1 OUT Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated Q2 G2 S2 0 /V BU S NT C1 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration VBUS S1 G1 0/VBUS S2 G2 OUT
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