APTM100H40FT3G Description
APTM100H40FT3G Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 21A @ Tc = 25°C 13 14 Application Q1 18 22 7 19 23 8 Q2 Q3 11 10 Q4 26 4 27 3 29 30 15 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 Welding converters.
APTM100H40FT3G Key Features
- Power MOS 8™ Fast FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
- Very low stray inductance
- Symmetrical design
- Internal thermistor for temperature monitoring