APTM100H80FT1G Description
APTM100H80FT1G Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 800mΩ typ @ Tj = 25°C ID = 11A @ Tc = 25°C 34 Q1 Q3 52 61 Q2 Q4 79 8 10 11 NTC 12 Pins 3/4 must be shorted together Application Welding converters Switched Mode Power Supplies.
APTM100H80FT1G Key Features
- Power MOS 8™ Fast FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
- Very low stray inductance
- Symmetrical design
- Internal thermistor for temperature monitoring