Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged.
Very low stray inductance - Symmetrical design.
Internal thermistor for temperature monitoring.
High level of integration
Benefits
31
32 234
78
14
13 10 11 12
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
V.
Full PDF Text Transcription for APTM100H40FT3G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APTM100H40FT3G. For precise diagrams, and layout, please refer to the original PDF.
APTM100H40FT3G Datasheet
