MRF559 Datasheet RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Manufacturer: Microsemi (now Microchip Technology)

MRF559 rf & microwave discrete low power transistors by Microsemi (now Microchip Technology) - Datasheet Preview

Datasheet Details

Part number	MRF559
Manufacturer	Microsemi (now Microchip Technology)
File Size	206.26 KB
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet	MRF559 Datasheet

General Description

: Designed primarily for wideband large signal stages in the UHF frequency range.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipation @ TC = 75ºC Derate above 75ºC Storage Temperature Range Value 16 30 3.0 150 2.0 20 -65 to +150 Unit Vdc Vdc Vdc mA Watts mW/ ºC ºC MSC1317.PDF 10-25-99 MRF559 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol Test Conditions BVCEO BVCBO BVEBO ICES (on) HFE Collector-Emitter Breakd

Overview

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS.

Key Features

Specified @ 12.5 V, 870 MHz Characteristics.
Output Power = .5 W.
Minimum Gain = 8.0 dB.
Efficiency 50%.
Cost Effective Macro X Package.
Electroless Tin Plated Leads for Improved Solderability Macro X.

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