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MS8001 GaAs Schottky Diodes

MS8001 Description

® TM Packaged and Bondable Chips GaAs Schottky Diodes MS8001 * MS8004 .
Microsemi’s MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations.

MS8001 Features

* Low-Noise Performance
* High Cut-off Frequency
* Passivated to Enhance Reliability

MS8001 Applications

* Single and Balanced Mixers and Detectors
* Transceivers X, K and Ka Bands
* 30 and 60 GHz Radios
* Automotive Radar Detectors Maximum Ratings Incident Power Forward Current Reverse Voltage Operating Temperature Storage Temperature 100 mW @ 25°C Derate Linearly to 0 at 175°C 15 m

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GaAs Schottky Diodes Microsemi
Microsemi MS8001-like datasheet