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MS8001 - GaAs Schottky Diodes

Description

Microsemi’s MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations.

These Schottky devices have low series resistance and low junction capacitance.

Features

  • Low-Noise Performance.
  • High Cut-off Frequency.
  • Passivated to Enhance Reliability.
  • Packaged Diodes and Bondable Chips.

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Full PDF Text Transcription

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® TM Packaged and Bondable Chips GaAs Schottky Diodes MS8001 – MS8004 Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors ● Transceivers X, K and Ka Bands ● 30 and 60 GHz Radios ● Automotive Radar Detectors Maximum Ratings Incident Power Forward Current Reverse Voltage Operating Temperature Storage Temperature 100 mW @ 25°C Derate Linearly to 0 at 175°C 15 mA @ 25°C 5V -55°C to +175°C -55°C to +200°C Description Microsemi’s MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky devices have low series resistance and low junction capacitance.
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