MS8004 Datasheet | Microsemi

® TM Packaged and Bondable Chips Ga As Schottky Diodes MS8001 - MS8004 Features - Low-Noise Performance - High Cut-off Frequency - Passivated to Enhance Reliability - Packaged Diodes and Bondable Chips Applications - Single and Balanced Mixers and Detectors - Transceivers X, K and Ka Bands - 30 and 60 GHz Radios - Automotive Radar Detectors Maximum Ratings Incident Power Forward Current Reverse Voltage Operating Temperature Storage Temperature 100 m W @ 25°C Derate Linearly to 0 at 175°C 15 m A @ 25°C 5V -55°C to +175°C -55°C to +200°C Description Microsemi’s MS8000 series of Ga As Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky devices have low series resistance and low junction capacitance. The resulting low noise figure makes these diodes suitable for sensitive mixer and detector applications from below X band to beyond Ka band frequencies. Ordering Information P00 is the designation for the bondable chip Schottky (e.g. MS8001-P00). Packaged diodes are designated by the package outline number (e.g. MS8001-30) IMPORTANT: For the most current data, consult our website : .MICROSEMI. Specifications are subject to change. Consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions. 1 The MS8000 Series of products are . supplied with a Ro HS plaint Gold finish Copyright © 2008 Rev.: 2022-05-12 Microsemi...