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SCHOTTKY DIODES
TM ® Silicon Low Barrier
MS8250 – 48
Features
● For Detector and Mixer Applications ● Vertical Offset Contact ● Low Capacitance Package (0.09 pF) ● Available as Bondable Chips ● Priced for Commercial Applications
Specifications @ 25°C
● VF (1 mA): 0.39 V Max. ● VB (10 A): 3 V Min. ● IR (1 V): 100 nA Max. ● RS (1 mA): 8 Typ. ● CT (0 V, 1 MHz): 0.24 pF Max., 0.20 pF Typ.
Maximum Ratings
Incident Power Reverse Voltage Forward Current Power Dissipation Operating Temperature Storage Temperature
+20 dBm @ 25°C 3V 10 mA @ 25°C 50 mW @ 25°C -65°C to +150°C -65°C to +150°C
Description
The MS8520-48 is low barrier, N-type, silicon Schottky diode designed for applications in microwave mixers and detectors at frequencies from below 100 MHz to beyond 40 GHz.
MS8250-48 Datasheet
