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MS8001 - GaAs Schottky Diodes

General Description

Microsemi’s MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations.

These Schottky devices have low series resistance and low junction capacitance.

Key Features

  • Low-Noise Performance.
  • High Cut-off Frequency.
  • Passivated to Enhance Reliability.
  • Packaged Diodes and Bondable Chips.

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
MS8002 GaAs Schottky Diodes
MS8003 GaAs Schottky Diodes
MS8004 GaAs Schottky Diodes
MS8250-48 Schottky Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® TM Packaged and Bondable Chips GaAs Schottky Diodes MS8001 – MS8004 Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors ● Transceivers X, K and Ka Bands ● 30 and 60 GHz Radios ● Automotive Radar Detectors Maximum Ratings Incident Power Forward Current Reverse Voltage Operating Temperature Storage Temperature 100 mW @ 25°C Derate Linearly to 0 at 175°C 15 mA @ 25°C 5V -55°C to +175°C -55°C to +200°C Description Microsemi’s MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky devices have low series resistance and low junction capacitance.