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VRF2933 Datasheet

RF POWER VERTICAL MOSFET

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RF POWER VERTICAL MOSFET
The VRF2933 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
VRF2933
VRF2933MP
50V, 300W, 150MHz
D
SS
G
FEATURES
• Improved Ruggedness V(BR)DSS = 170V
• 300W with 22dB Typ. Gain @ 30MHz, 50V
• Excellent Stability & Low IMD
• Common Source Configuration
• Available in Matched Pairs
• 3:1 Load VSWR Capability at Specified Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• Improved Replacement for SD2933
• Thermally Enhanced Package
• RoHS Compliant
Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Continuous Drain Current @ TC = 25°C
VGS Gate-Source Voltage
PD Total Device dissipation @ TC = 25°C
TSTG Storage Temperature Range
TJ Operating Junction Temperature Max
All Ratings: TC =25°C unless otherwise specified
VRF2933(MP)
Unit
170 V
40 A
±40 V
648 W
-65 to 150
200
°C
Static Electrical Characteristics
Symbol
V(BR)DSS
VDS(ON)
IDSS
IGSS
Parameter
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 20A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
gfs Forward Transconductance (VDS = 10V, ID = 20A)
VGS(TH)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min Typ Max Unit
170 180
1.8 2.8
V
2.0 mA
2.0 μA
8 mhos
2.9 3.6 4.4
V
Thermal Characteristics
Symbol
Characteristic
RθJC
Junction to Case Thermal Resistance
Min Typ Max Unit
0.27 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

VRF2933 Datasheet

RF POWER VERTICAL MOSFET

No Preview Available !

Dynamic Characteristics
Symbol
Parameter
CISS Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Functional Characteristics
Symbol
Parameter
GPS f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W
ηD f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W
ψ f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W
Test Conditions
VGS = 0V
VDS = 50V
f = 1MHz
3:1 VSWR - All Phase Angles
VRF2933(MP)
Min Typ Max Unit
740
400 pF
32
Min Typ Max Unit
20 25
dB
50 %
No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
55
7.5V
50
45 6.5V
40
35 6V
30
5.5V
25
20 5V
15
10 4.5V
5 4V
0 3.5V
0
5
10 15
20
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
1.0E−8
1.0E−9
Ciss
Coss
1.0E−10
Crss
1.0E−11 0
10
20 30
40 50 60
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
30
250µs PULSE
TEST<0.5 % DUTY
CYCLE
25
TJ= -55°C
20 TJ= 25°C
15
10
5
TJ= 125°C
0
02
46
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
100
IDMax
10
Rds(on)
PD Max
TJ = 125°C
TC = 75°C
1
1
10
100 800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area


Part Number VRF2933
Description RF POWER VERTICAL MOSFET
Maker Microsemi
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