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  Microsemi Electronic Components Datasheet  

2N3439L Datasheet

NPN LOW POWER SILICON TRANSISTOR

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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368
Devices
2N3439
2N3439L
2N3440
2N3440L
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@TA = 250C(1)
@TC = 250C(2)
Operating & Storage Temperature Range
1) Derate linearly 4.57 mW/0C for TA > +250C
2) Derate linearly 28.5 mW/0C for TC > +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
2N3439 2N3440
350 250
450 300
7.0
1.0
0.8
5.0
-55 to +200
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
2N3439
2N3440
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 300 Vdc
2N3439
ICEO
VCE = 200 Vdc
2N3440
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
Units
Vdc
Vdc
Vdc
Adc
W
W/0C
0C
Min.
350
250
TO- 5*
2N3439L, 2N3440L
TO-39* (TO205-AD)
2N3439, 2N3440
*See Appendix A for
Package Outline
Max.
Unit
Vdc
2.0 µAdc
2.0 µAdc
10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N3439L Datasheet

NPN LOW POWER SILICON TRANSISTOR

No Preview Available !

2N3439, L, 2N3440, L, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCE = 450 Vdc, VBE = -1.5 Vdc
2N3439
VCE = 300 Vdc, VBE = -1.5 Vdc
Collector-Base Cutoff Current
2N3440
VCB = 360 Vdc
2N3439
VCB = 250 Vdc
2N3440
VCB = 450 Vdc
2N3439
VCB = 300 Vdc
ON CHARACTERISTICS (3)
2N3440
Forward-Current Transfer Ratio
IC = 20 mAdc, VCE = 10 Vdc
IC = 2.0 mAdc, VCE = 10 Vdc
IC = 0.2 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 4.0 mAdc
Base-Emitter Saturation Voltage
IC = 50 mAdc, IB = 4.0 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz
Forward Current Transfer Ratio
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 5.0 Vdc, IC = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 200 Vdc; IC = 20 mAdc, IB1= 2.0 mAdc
Turn-Off Time
VCC = 200 Vdc; IC = 20 mAdc, IB1 = -IB2 = 2.0 mAdc
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 cycle, t = 1.0 s
Test 1
VCE = 5.0 Vdc, IC = 1.0 Adc
Test 2
Both Types
VCE = 350 Vdc, IC = 14 mAdc 2N3439
Test 3
VCE = 250 Vdc, IC = 20 mAdc 2N3440
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
ICEX
ICBO
hFE
VCE(sat)
VBE(sat)
hfe
hfe
Cobo
Cibo
ton
toff
Min. Max. Unit
5.0 µAdc
5.0 µAdc
2.0
2.0 µAdc
5.0
5.0
40 160
30
10
0.5 Vdc
1.3 Vdc
3.0 15
25
10
75
1.0
10
pF
pF
µs
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N3439L
Description NPN LOW POWER SILICON TRANSISTOR
Maker Microsemi Corporation
Total Page 3 Pages
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