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2N3740 - Medium Power PNP Transistors

Description

These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process.

This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas.

Features

  • Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Complementary to NPN 2N3766 (2N3740) Medium Power PNP Transistors.

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Datasheet preview – 2N3740

Datasheet Details

Part number 2N3740
Manufacturer Microsemi Corporation
File Size 62.60 KB
Description Medium Power PNP Transistors
Datasheet download datasheet 2N3740 Datasheet
Additional preview pages of the 2N3740 datasheet.

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Full PDF Text Transcription

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7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • • 2N3740 Drivers Switches Medium-Power Amplifiers FEATURES: • • • • Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Complementary to NPN 2N3766 (2N3740) Medium Power PNP Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.
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