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  Microsemi Electronic Components Datasheet  

2N3740 Datasheet

Medium Power PNP Transistors

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7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
APPLICATIONS:
Drivers
Switches
Medium-Power Amplifiers
FEATURES:
Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp
High Gain Characteristics: hFE @ IC = 250 mA: 30-100
Excellent Safe Area Limits
Complementary to NPN 2N3766 (2N3740)
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200° C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
VCEO*
VEB*
VCB*
IC*
IC*
IB*
TSTG*
TJ*
PD*
θ JC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Peak Collector Current
Continuous Collector Current
Base Current
Storage Temperature
Operating Junction Temperature
Total Device Dissipation
TC = 25° C
Derate above 25° C
Thermal Impedance
* Indicates JEDEC registered data.
MSC1039.PDF 03-12-99
2N3740
Medium Power
PNP Transistors
TO-66
VALUE
60
7.0
60
10
4.0
2.0
-65 to 200
-65 to 200
25
0.143
7
UNITS
Vdc
Vdc
Vdc
Adc
Adc
Adc
°C
°C
Watts
W/° C
° C/W


  Microsemi Electronic Components Datasheet  

2N3740 Datasheet

Medium Power PNP Transistors

No Preview Available !

2N3740
ELECTRICAL CHARACTERISTICS:
(25°Case Temperature Unless Otherwise Noted)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VCEO(sus)*
IEB0*
ICEX*
Collector-Emitter
Sustaining Voltage
Emitter Base Cutoff
Current
Collector Cutoff Current
ICEO*
ICBO*
hFE*
Collector-Emitter Cutoff
Current
Collector Base Cutoff
Current
DC Current Gain
(Note 1)
VCE(sat)*
VBE*
Collector-Emitter
Saturation Voltage
(Note 1)
Base-Emitter Voltage
(Note 1)
IC = 100 mAdc, IB = 0 (Note 1)
VEB = 7.0 Vdc
VCE = 60 Vdc, VBE(off) = 1.5 Vdc
VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 150° C
VCE = 40 Vdc, IB = 0
VCB = 60 Vdc, IE = 0
IC = 100 mAdc, VCE = 1.0 Vdc
IC = 250 mAdc, VCE = 1.0 Vdc
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.0 Adc, VCE = 1.0 Vdc
IC = 1.0 Adc, IB = 125 mAdc
IC = 250 mAdc, VCE = 1.0 Vdc
fT*
hfe*
Cob*
Current Gain Bandwidth
Product
Small-Signal Current
Gain
Common Base Output
Capacitance
IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 MHz
IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz
VCB = 10 Vdc, IC = 0, f = 100 kHz
Note 1: Pulse Test: PW 300µs, Duty Cycle 2.0%
* Indicates JEDEC registered data.
VALUE
Min. Max.
60 ----
Units
Vdc
---- 0.5 mAdc
---- 100 µAdc
---- 1.0 mAdc
---- 1.0 mAdc
---- 100 µAdc
40 ---- ----
30 100 ----
20 ---- ----
10 ---- ----
---- 0.6 Vdc
---- 1.0 Vdc
3.0 ---- MHz
25 ---- ----
---- 100 pF
MSC1039.PDF 03-12-99


Part Number 2N3740
Description Medium Power PNP Transistors
Maker Microsemi Corporation
Total Page 3 Pages
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