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  Microsemi Electronic Components Datasheet  

2N5661 Datasheet

NPN POWER SILICON TRANSISTOR

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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454
Devices
2N5660
2N5661
2N5662
2N5663
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C
@ TC = +1000C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Symbol
Symbol
VCEO
VCBO
VCER
VEBO
IB
IC
PT
TJ, Tstg
2N5660
2N5661
2N5660 2N5661
2N5662 2N5663
200 300
250 400
250 400
6.0
0.5
2.0
2N5660
2N5661
2.0(1)
20(3)
2N5662
2N5663
1.0(2)
15(4)
-65 to +200
2N5662
2N5663
Thermal Resistance, Junction-to-Case
RθJC
Junction-to-Ambient RθJA
1) Derate linearly 11.4 mW/0C for TA >+ 250C
2) Derate linearly 5.7 mW/0C for TA > +250C
3) Derate linearly 200 mW/0C for TC > +1000C
4) Derate linearly 150 mW/0C for TC > +1000C
5.0
87.5
6.67
145.8
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
2N5660, 2N5662
2N5661, 2N5663
V(BR)CEO
Collector-Base Breakdown Voltage
IC = 10 mAdc, RBE = 100
2N5660, 2N5662
2N5661, 2N5663
V(BR)CER
Emitter-Base Breakdown Voltage
IE = 10 µAdc
V(BR)EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
Min.
200
300
250
400
6.0
TO-66*
(TO-213AA)
2N5660, 2N5661
TO-5*
2N5662, 2N5663
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
Vdc
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N5661 Datasheet

NPN POWER SILICON TRANSISTOR

No Preview Available !

2N5660, 2N5661, 2N5662, 2N5663 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Emitter Cutoff Current
VCE = 200 Vdc
2N5660, 2N5662
VCE = 300 Vdc
Collector-Base Cutoff Current
2N5661, 2N5663
VCB = 200 Vdc
2N5660, 2N5662
VCB = 250 Vdc
2N5660, 2N5662
VCB = 300 Vdc
2N5661, 2N5663
VCB = 400 Vdc
ON CHARACTERISTICS (5)
2N5661, 2N5663
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 2.0 Vdc
2N5660, 2N5662
2N5661, 2N5663
IC = 0.5 Adc, VCE = 5.0 Vdc
2N5660, 2N5662
2N5661, 2N5663
IC = 1.0 Adc, VCE = 5.0 Vdc
All Types
IC = 2.0 Adc, VCE = 5.0 Vdc
All Types
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.4 Adc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.4 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.1 Adc, VCE = 5.0 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 15 Adc
2N5660, 2N5662
VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 25 Adc
Turn-Off Time
2N5661, 2N5663
VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 15 Adc 2N5660, 2N5662
VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 25 Adc 2N5661, 2N5663
SAFE OPERATING AREA
DC Tests
TC = +1000C, 1 Cycle, t 1.0 s
Test 1
VCE = 10 Vdc, IC = 2.0 Adc
2N5660, 2N5661
VCE = 7.5 Vdc, IC = 2.0 Adc
Test 2
2N5662, 2N5663
VCE = 40 Vdc, IC = 500 mAdc
2N5660, 2N5661
VCE = 25 Vdc, IC = 600 mAdc
Test 3
2N5662, 2N5663
VCE = 200 Vdc, IC = 36 mAdc
2N5660
VCE = 200 Vdc, IC = 27 mAdc
Test 4
2N5662
VCE = 300 Vdc, IC = 19 mAdc
2N5661
VCE = 300 Vdc, IC = 14 mAdc
2N5663
(5) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
ICES
ICBO
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
ton
toff
Min.
40
25
40
25
15
5.0
2.0
Max.
0.2
0.2
0.1
1.0
0.1
1.0
120
75
0.4
0.8
1.2
1.5
7.0
45
0.25
0.25
0.85
1.2
Unit
µAdc
µAdc
µAdc
mAdc
µAdc
mAdc
Vdc
Vdc
pF
µs
µs
120101
Page 2 of 2


Part Number 2N5661
Description NPN POWER SILICON TRANSISTOR
Maker Microsemi Corporation
Total Page 3 Pages
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