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  Microsemi Electronic Components Datasheet  

2N6676 Datasheet

(2N66xx) NPN POWER SILICON TRANSISTOR

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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/538
Devices
2N6676
2N6678
2N6691
2N6693
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = 250C
@ TC = 250C(1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 1.0 W/0C for TC > 250C
2) Derate linearly 34.2 mW/0C for TA > 250C
3) Derate linearly 17.1 mW/0C for TA > 250C
Symbol
VCEO
VCBO
VCEX
VEBO
IB
IC
PT
Top; Tstg
2N6676 2N6678
2N6691 2N6693
300 400
450 650
450 650
8.0
5.0
15
2N6676
2N6678
6.0(2)
175
2N6691
2N6693
3.0(3)
175
-65 to +200
Symbol
RθJC
Max.
1.0
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N6676, 2N6691
2N6678, 2N6693
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 450 Vdc, VBE = 1.5 Vdc
2N6676, 2N6691
ICEX
VCE = 650 Vdc, VBE = 1.5 Vdc
2N6678, 2N6693
Unit
Vdc
Vdc
Vdc
Vdc
Adc 2N6676, 2N6678
Adc TO-3 (TO-204AA)*
W
W
0C
Unit
0C/W
2N6691, 2N6693
TO-61*
* See Appendix A for Package
Outline
Min. Max.
Unit
300 Vdc
400
0.1 mAdc
0.1
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N6676 Datasheet

(2N66xx) NPN POWER SILICON TRANSISTOR

No Preview Available !

2N6676, 2N6678, 2N6691, 2N6693 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Emitter-Base Cutoff Current
VEB = 8.0 Vdc
Collector-Base Cutoff Current
VCB = 450 Vdc
VCB = 650 Vdc
ON CHARACTERISTICS (4)
2N6676, 2N6691
2N6678, 2N6693
Forward-Current Transfer Ratio
IC = 1.0 Adc; VCE = 3.0 Vdc
IC = 15 Adc; VCE = 3.0 Vdc
Collector-Emitter Saturation Voltage
IC = 15 Adc; IB = 3.0 Adc
Base-Emitter Saturation Voltage
IC = 15 Adc; IB = 3.0 Adc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc; VCE = 10 Vdc, f = 5 MHz
Output Capacitance
VCB = 10 Vdc; IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
See Figure 3 of MIL-PRF-19500/538
Fall Time
Cross-Over Time
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 11.7 Vdc, IC = 15 Adc
Test 2
All Types
VCE = 30 Vdc, IC = 5.9 Adc
Test 3
2N6676, 2N6678
VCE = 100 Vdc, IC = 0.25 Adc
Test 4
All Types
VCE = 25 Vdc, IC = 7.0 Adc
Test 5
2N6691, 2N6693
VCE = 300 Vdc, IC = 20 mAdc
2N6676, 2N6691
VCE = 400 Vdc, IC = 10 mAdc
2N6678, 2N6693
Clamped Switching
TA = 250C; VCC = 15 Vdc
IC = 15 Adc; Clamped Voltage = 350 Vdc 2N6676, 2N6691
IC = 15 Adc; Clamped Voltage = 450 Vdc 2N6678, 2N6693
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
IEBO
ICBO
Min.
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
td
tr
ts
tf
tc
15
8.0
3.0
150
Max.
2.0
1.0
1.0
40
20
1.0
1.5
10
500
0.1
0.6
2.5
0.5
0.5
Unit
mAdc
mAdc
Vdc
Vdc
pF
µs
µs
µs
µs
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N6676
Description (2N66xx) NPN POWER SILICON TRANSISTOR
Maker Microsemi Corporation
Total Page 2 Pages
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