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APT28GA60K - High Speed PT IGBT

Key Features

  • Fast switching with low EMI.
  • Very Low Eoff for maximum efficiency.
  • Ultra low Cres for improved noise immunity.
  • Low conduction loss.
  • Low gate charge.
  • Increased intrinsic gate resistance for low EMI.
  • RoHS compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short www.DataSheet4U.net delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.