APT28F60S Datasheet | Microsemi

- Fast switching with low EMI - Low trr for high reliability - Ultra low Crss for improved noise immunity - Low gate charge - Avalanche energy rated - Ro HS pliant TYPICAL APPLICATIONS - ZVS phase shifted and other full bridge - Half bridge - PFC and other boost converter - Buck converter - Single and two switch forward - Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Ratings 30 19 105 ±30 780 14 Unit V m J A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) 0.22 Package Weight 6.2 10 Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw 1.1 Microsemi Website-http://.microsemi. N- m -55 0.11 150 °C 300 oz g in- lbf 04-2009 050-8118 Rev C Min Typ Max 520 0.24 Unit W °C/W Static Characteristics Symbol VBR(DSS) ΔVBR(DSS)/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS TJ = 25°C unless otherwise...