APT28GA60K Datasheet | Microsemi

TURES - Fast switching with low EMI - Very Low Eoff for maximum efficiency - Ultra low Cres for improved noise immunity - Low conduction loss - Low gate charge - Increased intrinsic gate resistance for low EMI - Ro HS pliant TYPICAL APPLICATIONS - ZVS phase shifted and other full bridge - Half bridge - High power PFC boost - Welding - UPS, solar, and other inverters - High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" frome Case for 10 Seconds Ratings 600 50 28 84 ±30 223 84A @ 600V -55 to 150 300 Unit °C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25°C unless otherwise specified Test Conditions VGE = 0V, IC = 1.0m A VGE = 15V, IC = 16A VCE = 600V, VGE = 0V TJ = 25°C TJ = 125°C 3 TJ = 25°C TJ =...