Datasheet Details
| Part number | APT28GA60SD15 |
|---|---|
| Manufacturer | Microsemi (now Microchip Technology) |
| File Size | 265.32 KB |
| Description | High Speed PT IGBT |
| Datasheet | APT28GA60SD15_MicrosemiCorporation.pdf |
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Overview: APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT ® (B) D3PAK TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency pared to other IGBT technologies. Low G gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short ..net G C E delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
| Part number | APT28GA60SD15 |
|---|---|
| Manufacturer | Microsemi (now Microchip Technology) |
| File Size | 265.32 KB |
| Description | High Speed PT IGBT |
| Datasheet | APT28GA60SD15_MicrosemiCorporation.pdf |
|
|
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| Part Number | Description |
|---|---|
| APT28GA60BD15 | High Speed PT IGBT |
| APT28GA60K | High Speed PT IGBT |
| APT28F60B | N-Channel FREDFET |
| APT28F60S | N-Channel FREDFET |
| APT28M120B2 | N-Channel MOSFET |
| APT28M120L | N-Channel MOSFET |
| APT200GN60B2G | Field Stop IGBT |
| APT200GT60JR | Thunderbolt IGBT |
| APT200GT60JRDL | Resonant Mode Combi IGBT |
| APT200GT60JRDQ4 | Thunderbolt IGBT |