APT28GA60SD15
APT28GA60SD15 is High Speed PT IGBT manufactured by Microsemi.
TURES
- Fast switching with low EMI
- Very Low Eoff for maximum efficiency
- Ultra low Cres for improved noise immunity
- Low conduction loss
- Low gate charge
- Increased intrinsic gate resistance for low EMI
- Ro HS pliant
TYPICAL APPLICATIONS
- ZVS phase shifted and other full bridge
- Half bridge
- High power PFC boost
- Welding
- UPS, solar, and other inverters
- High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Gate-Emitter Voltage
Ratings
600 50 28 84 ±30 222 84A @ 600V -55 to 150 300
Unit
Total Power Dissipation @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
°C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25°C unless otherwise specified
Test...
