LS5115
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5115 LOW ON RESISTANCE r DS(on) ≤ 100Ω LOW CAPACITANCE 6p F ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage Temperature ‐55°C to +200°C LS5115 Benefits: Operating Junction Temperature ‐55°C to +200°C
- Low On Resistance Maximum Power Dissipation
- ID(off) ≤ 500 p A Continuous Power Dissipation 500m W
- Switches directly from TTL logic MAXIMUM CURRENT LS5115 Applications: Gate Current (Note 1) IG = ‐50m A
- Analog Switches MAXIMUM VOLTAGES
- mutators Gate to Drain Voltage VGDS = 30V
- Choppers Gate to Source Voltage VGSS = 30V LS5115 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 3 ‐‐ 6 VDS = ‐15V, ID = ‐1n A V VGS(F) Gate to Source Forward Voltage ‐‐ ‐0.7 ‐1 IG = ‐1m A, VDS = 0V ‐‐ ...
