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XD1004-BD - GaAs MMIC Distributed Amplifier

General Description

(2) Channel temperature affects a device's MTTF.

Key Features

  • Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout XD1004-BD Mimix Broadband’s 10.0-40.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high rep.

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Datasheet Details

Part number XD1004-BD
Manufacturer Mimix Broadband
File Size 555.52 KB
Description GaAs MMIC Distributed Amplifier
Datasheet download datasheet XD1004-BD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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10.0-40.0 GHz GaAs MMIC Distributed Amplifier December 2006 - Rev 19-Dec-06 D1004-BD Features Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout XD1004-BD Mimix Broadband’s 10.0-40.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or www.DataSheet4U.