XD1002-BD Datasheet | Mimix Broadband

Features Wide Band Driver Amplifier 9.0 d B Small Signal Gain 5.0 d B Noise Figure 15.0 d B Gain Control +9.0 d Bm P1d B pression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 D1002-BD Chip Device Layout General Description Mimix Broadband’s 0.05-50.0 GHz Ga As MMIC distributed amplifier has a small signal gain of 9.0 d B with a noise figure of 5.0 d B across the band.The device also includes 15.0 d B gain control and a +9.0 d Bm P1d B pression point.This MMIC uses Mimix Broadband’s Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.This device is well suited for microwave, millimeter-wave and wideband military applications. Absolute Maximum Ratings Supply Voltage (Vd) +10.0 VDC Supply Current (Id) 150 m A Gate Bias Voltage (Vg1) +0.3 VDC Gate Bias Voltage (Vg2) +3.0 VDC Input Power (Pin) +18 d Bm Storage Temperature (Tstg) -65 to +165 ºC Operating Temperature (Ta) -55 to +85 ºC Channel Temperature (Tch)1 +175 ºC (1) Channel temperature affects a device's MTTF. It is remended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 o C) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Gain Control Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 d B pression (P1d B)1 Drain Bias Voltage (Vd) Gain Control Bias (Vg1) Gate Bias Voltage (Vg2) Supply Current (Id) (Vd=8.5V, Vg1=0.0V, Vg2=1.0V Typical) Units GHz d B d B d B d B d B d B d B d Bm VDC VDC VDC m A Min. 0.05 -2.0 - Typ. - 14.0 14.0 9.0 +/-1.5 15.0 40.0 5.0 +9.0 +8.5 0.0 +1.0 120 Max. 50.0 +9.0 +0.1 140 (1) Measured using constant current. Mimix...