Datasheet Details
| Part number | XD1002-BD |
|---|---|
| Manufacturer | Mimix Broadband |
| File Size | 671.98 KB |
| Description | Distributed Amplifier |
| Datasheet | XD1002-BD-MimixBroadband.pdf |
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Overview: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier January 2010 - Rev.
| Part number | XD1002-BD |
|---|---|
| Manufacturer | Mimix Broadband |
| File Size | 671.98 KB |
| Description | Distributed Amplifier |
| Datasheet | XD1002-BD-MimixBroadband.pdf |
|
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Mimix Broadband’s 0.05-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 9.0 dB with a noise figure of 5.0 dB across the band.The device also includes 15.0 dB gain control and a +9.0 dBm P1dB pression point.This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.This device is well suited for microwave, millimeter-wave and wideband military applications.
Absolute Maximum Ratings Supply Voltage (Vd) +10.0 VDC Supply Current (Id) 150 mA Gate Bias Voltage (Vg1) +0.3 VDC Gate Bias Voltage (Vg2) +3.0 VDC Input Power (Pin) +18 dBm Storage Temperature (Tstg) -65 to +165 ºC Operating Temperature (Ta) -55 to +85 ºC Channel Temperature (Tch)1 +175 ºC (1) Channel temperature affects a device's MTTF.
It is remended to keep channel temperature as low as possible for maximum life.
| Part Number | Description |
|---|---|
| XD1002 | GaAs MMIC Distributed Amplifier |
| XD1001 | GaAs MMIC Distributed Amplifier |
| XD1004-BD | GaAs MMIC Distributed Amplifier |
| XD1004-QT | GaAs MMIC Distributed Amplifier |
| XD1005-BD | GaAs MMIC Distributed Amplifier |
| XD1005-QT | GaAs MMIC Distributed Amplifier |