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XD1004-BD Datasheet Gaas Mmic Distributed Amplifier

Manufacturer: Mimix Broadband

Overview: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier December 2006 - Rev 19-Dec-06.

Datasheet Details

Part number XD1004-BD
Manufacturer Mimix Broadband
File Size 555.52 KB
Description GaAs MMIC Distributed Amplifier
Datasheet XD1004-BD_MimixBroadband.pdf

General Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 175 mA +17 dBm -65 to +165 OC 2 -55 to MTTF Table 2 MTTF Table (2) Channel temperature affects a device's MTTF.

It is remended to keep channel temperature as low as possible for maximum life.

Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB pression Point (P1dB)1 Drain Bias Voltage (Vd) Supply Current (Id) (Vd=5.0V) (1) Measured using constant current.

Key Features

  • Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout XD1004-BD Mimix Broadband’s 10.0-40.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high rep.

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