XD1001-BD Datasheet | MACOM Technology Solutions

Distributed Amplifier 18-50 GHz Features - Ultra Wide Band Driver Amplifier - Fiber Optic Modulator Driver - 17.0 d B Small Signal Gain - 5.0 d B Noise Figure - 30 d B Gain Control - +15.0 d Bm P1d B pression Point - 100% On-Wafer RF, DC and Output Power Testing - 100% Visual Inspection to MIL-STD-883 Method - Ro HS- pliant and 260°C Reflow patible Description M/A- Tech’s 18.0-50.0 GHz Ga As MMIC distributed amplifier has a small signal gain of 17.0 d B with a noise figure of 5.0 d B across the band. The device also includes 30.0 d B gain control and a +15 d Bm P1d B pression point. This MMIC uses M/A- Tech’s Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave and wideband military applications. Ordering Information Part Number Package XD1001-BD-000V “V” - vacuum release gel paks XD1001-BD-EV1 evaluation module Chip Device Layout Rev....