XD1005-BD Datasheet | Mimix Broadband

Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 d B Small Signal Gain 5.0 d B Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout Mimix Broadband’s 10.0-40.0 GHz Ga As MMIC distributed amplifier has a small signal gain of 23.0 d B with a 5.0 d B noise figure. This MMIC uses Mimix Broadband’s 0.15 µm Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or .. eutectic solder die attach process. This device is well suited for microwave, millimeter-wave wideband military and fiber optic applications. General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 270 m A +17.0 d Bm -65 to +165 OC 1 -55 to MTTF Table 1 MTTF Table (1) Channel temperature affects a device's MTTF. It is remended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 o C) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 d B pression Point (P1d B)2 Drain Bias Voltage (Vd) Supply Current (Id) (Vd=5.0V) (2) Measured using constant current. Units GHz d B d B d B d B d B d B d Bm VDC m A Min. 10.0 - Typ. 7.0 10.0 23.0 +/-5.0 35.0 5.0 TBD +5.0 190 Max. 40.0 +5.5 230 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband. Page 1 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the...