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XP1011 Datasheet GaAs MMIC Power Amplifier

Manufacturer: Mimix Broadband

Overview: 36.0-40.0 GHz GaAs MMIC Power Amplifier May 2006 - Rev 10-May-06 Velocium Products 18 - 20 GHz HPA - APH478 P1011 Chip Device.

Datasheet Details

Part number XP1011
Manufacturer Mimix Broadband
File Size 182.94 KB
Description GaAs MMIC Power Amplifier
Download XP1011 Download (PDF)

General Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.5 VDC 155,415,715 mA +0.3 VDC +8 dBm -65 to +165 OC -55 to MTTF TAble3 MTTF Table 3 (3) Channel temperature affects a device's MTTF.

It is recommended to keep channel temperature as low as possible for maximum life.

Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Output Power for 1 dB Compression (P1dB) 2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id) (Vd=5.0V, Vg=-0.5V Typical) Units GHz dB dB dB dB dB dBm dBm VDC VDC mA Min.

Key Features

  • Excellent Linear Output Amplifier Stage 21.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) +27.0 dBm Output P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron b.