XP1011ALMT
XP1011ALMT is P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
XP1011AL series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile.
BVDSS RDS(ON)
-100V 52mΩ
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
-100
Gate-Source Voltage
+20
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain Current, VGS @ 10V Drain Current, VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range
Operating Junction Temperature Range
-16
-10.1
-7.1
-5.7
-60
12.5 m J
-55 to 150
℃
-55 to...
