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XP1010 Datasheet Gaas Mmic Power Amplifier

Manufacturer: Mimix Broadband

Overview: 21.0-24.0 GHz GaAs MMIC Power Amplifier May 2006 - Rev 10-May-06 Velocium Products 18 - 20 GHz HPA - APH478 P1010 Chip Device.

Datasheet Details

Part number XP1010
Manufacturer Mimix Broadband
File Size 196.31 KB
Description GaAs MMIC Power Amplifier
Datasheet XP1010_MimixBroadband.pdf

General Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.5 VDC 600,670 mA +0.3 VDC +15 dBm -65 to +165 OC -55 to MTTF TAble3 MTTF Table 3 (3) Channel temperature affects a device's MTTF.

It is remended to keep channel temperature as low as possible for maximum life.

Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Output Power for 1 dB pression (P1dB) 2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1,2) Supply Current (Id) (Vd=5.0V, Vg=-0.3V Typical) Units GHz dB dB dB dB dB dBm dBm VDC VDC mA Min.

Key Features

  • Excellent Linear Output Amplifier Stage 19.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam litho.

XP1010 Distributor