Description
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+5.5 VDC 155,415,715 mA +0.3 VDC +8 dBm -65 to +165 OC -55 to MTTF TAble3 MTTF Table 3
(3) Channel temperature a
Features
- Excellent Linear Output Amplifier Stage 21.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) +27.0 dBm Output P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron b.