XP1011 Datasheet | Mimix Broadband

Features Excellent Linear Output Amplifier Stage 21.0 d B Small Signal Gain +36.0 d Bm Third Order Intercept (OIP3) +27.0 d Bm Output P1d B pression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 36.0-40.0 GHz Ga As MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 d Bm. This MMIC uses Mimix Broadband’s 0.15 µm Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy ..or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SAT and VSAT applications. General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.5 VDC 155,415,715 m A +0.3 VDC +8 d Bm -65 to +165 OC -55 to MTTF TAble3 MTTF Table 3 (3) Channel temperature affects a device's MTTF. It is remended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 o C) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Output Power for 1 d B pression (P1d B) 2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id) (Vd=5.0V, Vg=-0.5V Typical) Units GHz d B d B d B d B d B d Bm d Bm VDC VDC m A Min. 36.0 -1.0 Typ. 10.0 9.0 21.0 +/-0.5 +27.0 +36.0 +5.0 -0.5 640 Max. 40.0 0.0 - (1) Measured at +18 d Bm per tone output carrier level across the full frequency band. (2) Measured using constant current. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas...