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XP1014 Datasheet Gaas Mmic Power Amplifier

Manufacturer: Mimix Broadband

Overview: 8.5-11.0 GHz GaAs MMIC Power Amplifier April 2006 - Rev 14-Apr-06 Velocium Products 18 - 20 GHz HPA - APH478 P1014 Chip Device Layout XP1014 Mimix Broadband I0005129 TNO ©.

Datasheet Details

Part number XP1014
Manufacturer Mimix Broadband
File Size 191.58 KB
Description GaAs MMIC Power Amplifier
Datasheet XP1014_MimixBroadband.pdf

General Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 510 mA +0.0 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF.

It is remended to keep channel temperature as low as possible for maximum life.

Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Saturated Output Power (Psat) Power Added Efficiency (PAE) Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id) (Vd=6.0V, Vg=-0.7V Typical) Units GHz dB dB dB dB dB dBm % VDC VDC mA Min.

Key Features

  • XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s two stage 8.5-11.0 GHz GaAs MMIC power amplifier has a small signal gain of 18.0 dB with a +31 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and.

XP1014 Distributor