XP1014 - GaAs MMIC Power Amplifier

Product Overview

Mimix Broadband

Datasheet Details

Part number	XP1014
Manufacturer	Mimix Broadband
File Size	191.58 KB
Description	GaAs MMIC Power Amplifier
Datasheet	XP1014 Datasheet
Additional preview pages of the XP1014 datasheet.

Product details

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 510 mA +0.0 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF.It is recommended to keep channel temperature as low as possible for maximum life.Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return

Features

XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s two stage 8.5-11.0 GHz GaAs MMIC power amplifier has a small signal gain of 18.0 dB with a +31 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and.

📁 Similar Datasheet

XP1011ALMT - P-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)
XP1005-BD - Power Amplifier (MA-COM)
XP1031-QK - Power Amplifier (MA-COM)
XP1035-QH - Power Amplifier (MA-COM)
XP1039-QJ - Power Amplifier (MA-COM)
XP1042-QT - Power Amplifier (MA-COM)
XP1043-QH - Power Amplifier (MA-COM)
XP1044-QL - Power Amplifier (MA-COM)

Other Datasheets by Mimix Broadband

XP1010 - GaAs MMIC Power Amplifier
XP1011 - GaAs MMIC Power Amplifier
XP1012 - GaAs MMIC Power Amplifier
XP1013 - GaAs MMIC Power Amplifier
XP1013-BD - Power Amplifier
XP1015 - GaAs MMIC Power Amplifier

Published: May 25, 2007 |