XP1014 Datasheet | Mimix Broadband

Features XP1006/7 Driver Amplifier 18.0 d B Small Signal Gain +31.0 d Bm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s two stage 8.5-11.0 GHz Ga As MMIC power amplifier has a small signal gain of 18.0 d B with a +31 d Bm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive .. epoxy or eutectic solder die attach process. This device is well suited for radar applications. General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 510 m A +0.0 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is remended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 o C) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Saturated Output Power (Psat) Power Added Efficiency (PAE) Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id) (Vd=6.0V, Vg=-0.7V Typical) Units GHz d B d B d B d B d B d Bm % VDC VDC m A Min. 8.5 -6.0 Typ. 15.0 12.0 18.0 +/-1.0 +31.0 35 +8.0 -5.0 450 Max. 11.0 +9.0 -4.0 510 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband. Page 1 of 5 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export...