8 unit 500ma source type darlington transistor array.
High breakdown voltage (BVCEO ≥ 50V)
High-current driving (Io(max) =
–500mA)
mWith output pulldown resistance (Driving available with ofluorescent display.
M54564P and M54564FP are eight-circuit output-sourcing
PIN CONFIGURATION
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inp.
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