• Part: M54587P
  • Description: 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY
  • Category: Transistor
  • Manufacturer: Mitsubishi Electric
  • Size: 44.01 KB
Download M54587P Datasheet PDF
Mitsubishi Electric
M54587P
DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION NC IN1 IN2 IN3 IN4 INPUT IN5 6 7 8 9 10 15 14 13 12 11 1 2 3 4 5 20 19 18 17 16 MON O1 O2 O3 O4 OUTPUT O5 O6 O7 O8 VCC NC : No connection FEATURES q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (IC(max) = 500m A) q “L” active level input q With input diode q With clamping diodes q Wide operating temperature range (Ta = - 20 to +75° C) IN6 IN7 IN8 GND 20P4(P) Package type 20P2N-A(FP) APPLICATION Interfaces between microputers and high-voltage, highcurrent drive systems, drives of relays and MOS-bipolar logic IC interfaces CIRCUIT DIAGRAM (EACH CIRCUIT) VCC 7K INPUT 7K 2.7K 7.2K 3K GND OUTPUT FUNCTION The M54587 is produced by adding PNP transistors to M54585 inputs. Eight...