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M5M4256P-15 Datasheet 256K-Bit DRAM

Manufacturer: Mitsubishi Electric

Download the M5M4256P-15 datasheet PDF. This datasheet also includes the M5M4256P-12 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (M5M4256P-12-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

General Description

This is a fami Iy of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.

The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation_ Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities.

In addition to the RAS only refresh mode, the Hidden refresh mode and CAS before RAS refresh mode are available.

Overview

MITSUBISHI LSls M5M4256P-12, -15, -20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC.

Key Features

  • Type name Access time (max) (ns) Cycle time (min) (ns) Power diSSipation (typ) (mW) M5M4256P-12 120 230 260 M5M4256P-15 1.

More Datasheets from Mitsubishi Electric

Part Number Description
M5M4256P-12 256K-Bit DRAM
M5M4256P-20 256K-Bit DRAM
M5M4256L-12 256K-Bit DRAM
M5M4256L-15 256K-Bit DRAM
M5M4256L-20 256K-Bit DRAM
M5M4257L-12 256K-Bit DRAM
M5M4257L-15 256K-Bit DRAM
M5M4257L-20 256K-Bit DRAM
M5M4257P-12 256K-Bit DRAM
M5M4257P-15 256K-Bit DRAM