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M5M42S6S-15 Datasheet 256K-Bit DRAM

Manufacturer: Mitsubishi Electric

Download the M5M42S6S-15 datasheet PDF. This datasheet also includes the M5M42S6S-12 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (M5M42S6S-12-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

General Description

This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, lOiN power dissipation, and low costs are essential.

The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation.

Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities.

Overview

MITSUBISHI LSls MSM42S6S-12, -15, -20 262 144-BIT (262 144-WORD BY 1-BIT) DYNAMIC.

Key Features

  • Type name Access time (max) (ns) Cycle time (min) (ns) Power dissipation (typ) (mW) M5M4256S-12 120 230 260 M5M4256S-15 1.

More Datasheets from Mitsubishi Electric

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M5M42S6S-12 256K-Bit DRAM
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M5M4256L-20 256K-Bit DRAM
M5M4256P-12 256K-Bit DRAM
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