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MITSUBISHI LSls
MSM42S6S-12, -15, -20
262 144-BIT (262 144-WORD BY 1-BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, lOiN power dissipation, and low costs are essential. The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities.
M5M42S6S-12 Datasheet
