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M5M42S6S-15 - 256K-Bit DRAM

This page provides the datasheet information for the M5M42S6S-15, a member of the M5M42S6S-12 256K-Bit DRAM family.

Description

This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, lOiN power dissipation, and low costs are essential.

Features

  • Type name Access time (max) (ns) Cycle time (min) (ns) Power dissipation (typ) (mW) M5M4256S-12 120 230 260 M5M4256S-15 1.

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Datasheet Details

Part number M5M42S6S-15
Manufacturer Mitsubishi
File Size 0.99 MB
Description 256K-Bit DRAM
Datasheet download datasheet M5M42S6S-15 Datasheet
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Full PDF Text Transcription

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MITSUBISHI LSls MSM42S6S-12, -15, -20 262 144-BIT (262 144-WORD BY 1-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, lOiN power dissipation, and low costs are essential. The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities.
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