Download the M5M42S6S-20 datasheet PDF.
This datasheet also covers the M5M42S6S-12 variant, as both devices belong to the same 256k-bit dram family and are provided as variant models within a single manufacturer datasheet.
General Description
This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, lOiN power dissipation, and low costs are essential.
Key Features
Type name
Access time (max) (ns)
Cycle time (min) (ns)
Power dissipation (typ) (mW)
M5M4256S-12
120
230
260
M5M4256S-15
1.
Full PDF Text Transcription for M5M42S6S-20 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
M5M42S6S-20. For precise diagrams, and layout, please refer to the original PDF.
MITSUBISHI LSls MSM42S6S-12, -15, -20 262 144-BIT (262 144-WORD BY 1-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with ...
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is is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, lOiN power dissipation, and low costs are essential. The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in sy
M5M42S6S-20 Datasheet
