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M5M4V16169DTP-7 Datasheet

Manufacturer: Mitsubishi Electric

This datasheet includes multiple variants, all published together in a single manufacturer document.

M5M4V16169DTP-7 datasheet preview

Datasheet Details

Part number M5M4V16169DTP-7
Datasheet M5M4V16169DTP-7 M5M4V16169DTP Datasheet (PDF)
File Size 737.49 KB
Manufacturer Mitsubishi Electric
Description 16M (1M-WORD BY 16-BIT) CACHED DRAM
M5M4V16169DTP-7 page 2 M5M4V16169DTP-7 page 3

M5M4V16169DTP-7 Overview

PINCONFIGURATION (TOP VIEW) 1. The block data transfer between the DRAM and the data transfer buffers (RB1/RB2/WB1/WB2) is performed in one instruction cycle, a fundamental advantage over a conventional DRAM/SRAM cache. The RAM is fabricated with a high performance CMOS process, and is ideal.

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