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M5M4V4265CJ-6S Datasheet EDO 4M-Bit DRAM

Manufacturer: Mitsubishi Electric

Download the M5M4V4265CJ-6S datasheet PDF. This datasheet also includes the M5M4V4265CJ-5 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (M5M4V4265CJ-5-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

General Description

This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential.

The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs.

The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation.

Overview

MITMSUITBSIUSHBISLHSIIsLSIs M5M4V4265CJM,5TMP4V-452,6-56C,J-,7TP,--55,-S6,,--76,-5SS,,--67SS,-7S EDOED(HOY(PHEYRPPEARGPEA)GMEO) DMEO4D1E9431094-3B0I4T-B(2IT62(124642-1W44O-WRDORBDY.

More Datasheets from Mitsubishi Electric

Part Number Description
M5M4V4265CJ-6 EDO 4M-Bit DRAM
M5M4V4265CJ-5 EDO 4M-Bit DRAM
M5M4V4265CJ-5S EDO 4M-Bit DRAM
M5M4V4265CJ-7 EDO 4M-Bit DRAM
M5M4V4265CJ-7S EDO 4M-Bit DRAM
M5M4V4265CJ EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M4V4265CTP-5 EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M4V4265CTP-5S EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M4V4265CTP-6 EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M4V4265CTP-6S EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM