MGF1801B Overview
Description
The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits.
Key Features
- High output power at 1dB gain compression P1dB=23dBm(TYP.)
- High linear power gain GLP=9dB(TYP.)
