MGF1801B fet equivalent, microwave power gaas fet.
* High output power at 1dB gain compression P1dB=23dBm(TYP.)
* High linear power gain GLP=9dB(TYP.)
* High reliability and stability @f=8GHz
0.5±0.15
3
@f=8G.
The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a conf.
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