MGF1801B Description
The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN.
MGF1801B Key Features
- High output power at 1dB gain pression P1dB=23dBm(TYP.)
- High linear power gain GLP=9dB(TYP.)
- High reliability and stability @f=8GHz
- VDS=6V
- ID=100mA
- Refer to Bias Procedure