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MGF1801B - MICROWAVE POWER GaAs FET

General Description

The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

The hermetically sealed metalceramic for microstrip circuits.

4MIN.

Key Features

  • High output power at 1dB gain compression P1dB=23dBm(TYP. ).
  • High linear power gain GLP=9dB(TYP. ).
  • High reliability and stability @f=8GHz 0.5±0.15 3 @f=8GHz 2 2.

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MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN. 1 Unit:millimeters 4MIN. 0.5±0.15 FEATURES • High output power at 1dB gain compression P1dB=23dBm(TYP.) • High linear power gain GLP=9dB(TYP.) • High reliability and stability @f=8GHz 0.5±0.15 3 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.