MGF1801BT fet equivalent, high-power gaas fet.
* High linear power gain Glp=9.0dB @f=8GHz
* High P1dB P1dB=23dBm(TYP.) @f=8GHz
* High reliability and stability
APPLICATION
* S to X Band medium-power a.
The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for m.
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