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MGF1801BT Datasheet High-power GaAs FET

Manufacturer: Mitsubishi Electric

General Description

The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.

The MGF1801BT is mounted in the super 24 tape.

Overview

< High-power GaAs FET (small signal gain stage) > MGF1801BT S to X BAND / 0.

Key Features

  • High linear power gain Glp=9.0dB @f=8GHz.
  • High P1dB P1dB=23dBm(TYP. ) @f=8GHz.
  • High reliability and stability.