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P3S56D40ETP Datasheet - Mitsubishi

256M Double Data Rate Synchronous DRAM

P3S56D40ETP Features

* - Vdd=Vddq=2.5V+0.2V - Double data rate architecture; two data transfers per clock cycle - Bidirectional, data strobe (DQS) is transmitted/received with data - Differential clock inputs (CLK and /CLK) - DLL aligns DQ and DQS transitions with CLK transitions edges of DQS - Commands entered on each po

P3S56D40ETP General Description

M2S56D20ATP is a 4-bank x 16,777,216-word x 4-bit, M2S56D30ATP is a 4-bank x 8,388,608-word x 8-bit, M2S56D40ATP is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is re.

P3S56D40ETP Datasheet (815.69 KB)

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Datasheet Details

Part number:

P3S56D40ETP

Manufacturer:

Mitsubishi

File Size:

815.69 KB

Description:

256m double data rate synchronous dram.
DDR SDRAM (Rev.1.2) Jun. '01 Preliminary MITSUBISHI LSIs M2S56D20/ 30/ 40ATP 256M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents are.

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P3S56D40ETP 256M Double Data Rate Synchronous DRAM Mitsubishi

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