M54585KP Datasheet | Mitsubishi Electric

DESCRIPTION M54585KP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION 1 20 IN1→ 2 IN2→ 3 IN3→ 4 IN4→ 5 INPUT IN5→ 6 IN6→ 7 IN7→ 8 IN8 → 9 GND 19 →O1 18 →O2 17 →O3 16 →O4 15 →O5 14 →O6 13 →O7 12 →O8 11 → MON OUTPUT FEATURES q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (IC(max) = 500m A) q With clamping diodes q Driving available with TTL output or with PMOS IC output q With shrink small outline package NC : No connection Package type 20P2E-A CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC interfaces OUTPUT 2.7k INPUT 7.2k 3k FUNCTION The M54585KP has eight circuits, which are NPN Darlington transistors. Input transistors have resistance of 2.7k Ω between the base and input pin. A spike-killer clamping diode is provided between each output pin and GND. Output transistor emitters are all connected to the GND pin. Collector current is 500m A maximum. The maximum collector-emitter voltage is 50V. The eight circuits share the and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current (Unless otherwise noted, Ta = - 20 ~ +75°C) Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25°C, when mounted on board Ratings - 0.5 ~ +50 500 - 0.5 ~ +30 500 50 0.68 - 20 ~ +75 - 55 ~ +125 Unit V m A V m A V W °C °C Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 8-UNIT 500m A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE REMENDED OPERATING CONDITIONS...