M63803P Datasheet | Mitsubishi Electric

DESCRIPTION M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION IN1→ 1 IN2→ 2 IN3→ 3 INPUT IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 16 → O1 15 → O2 14 → O3 13 → O4 12 → O5 11 → O6 10 → O7 9 OUTPUT FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300m A) q Low output saturation voltage q Wide operating temperature range (Ta = - 40 to +85 °C) 16P4(P) 16P2N-A(FP) 16P2S-A(GP) Package type 16P2Z-A(KP) NC : No connection CIRCUIT DIAGRAM OUTPUT APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals INPUT 10.5k 10k GND FUNCTION The M63803P, M63803FP, M63803GP and M63803KP each have seven circuits consisting of NPN transistor. The transistor emitters are all connected to the GND pin (pin 8) The transistors allow synchronous flow of 300m A collector current. A maximum of 35V voltage can be applied between the collector and emitter. The seven circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI Parameter Collector-emitter voltage Collector current Input voltage (Unless otherwise noted, Ta = - 40 ~ +85°C) Conditions Output, H Current per circuit output, L M63803P M63803FP M63803GP M63803KP Ratings - 0.5 ~ +35 300 - 0.5 ~ +35 1.47 1.00 0.80 0.78 - 40 ~ +85 - 55 ~ +125 Unit V m A V Pd Power dissipation Ta = 25°C, when mounted on board Topr Tstg Operating temperature Storage temperature °C °C Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63803P/FP/GP/KP 7-UNIT 300m A TRANSISTOR ARRAY REMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = - 40 ~...