RA13H8891MA 2 Stage Amp Datasheet

RA13H8891MA Key Features

Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
Pout>13W, ηT>30% @ VDD=12.5V, VGG=5V, Pin=200mW
Broadband Frequency Range: 889-915MHz
Low-Power Control Current IGG=1mA (typ) at VGG=5V
Module Size: 66 x 21 x 9.88 mm
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output pow
RA13H8891MA-101 is a RoHS pliant products
RoHS pliance is indicate by the letter “G” after the Lot Marking
This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it ap
Frequency Range Output Power Total Efficiency 2