RA13H8891MB Mitsubishi Electric Datasheet

RA13H8891MB Key Features

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>13W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=1mW
• Broadband Frequency Range: 880-915MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 60.5 x 14 x 6.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output pow
• RA13H8891MB-101 is a RoHS pliant products
• RoHS pliance is Indicate by the letter “G” after the lot Marking
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it ap
• Frequency Range Output Power Total Efficiency 2